Nanosecond difference-frequency generation in orientation-patterned gallium phosphide
نویسندگان
چکیده
منابع مشابه
Mid-infrared tunable, narrow-linewidth difference- frequency laser based on orientation-patterned gallium phosphide
We report on the first characterization of orientation-patterned gallium phosphide (OP-GaP) crystals used to generate narrow-linewidth, coherent mid-infrared (MIR) radiation at 5.85m by difference frequency generation (DFG) of continuous-wave (cw) Nd:YAG laser at 1064nm and diode-laser at 1301nm. By comparison of the experimental absolute MIR efficiency versus focusing to Gaussian beam DFG the...
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Gallium phosphide~001! surfaces have been prepared by metalorganic vapor-phase epitaxy, and characterized in situ by low-energy electron diffraction, x-ray photoemission spectroscopy, and reflectance difference spectroscopy. Three stable phases were observed: (231), (131), and (2 34) with phosphorus coverages of 1.00, 0.67, and 0.13 ML, respectively. Reflectance difference spectra obtained at c...
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Ga self-diffusion in gallium phosphide ~GaP! is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy ~SIMS! is used to monitor intermixing of Ga and Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy ~MBE! on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D52.0 cm s exp(24.5 eV/...
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We demonstrate a midinfrared source tunable from 6.7 to 12.7 μm via difference frequency generation (DFG) in orientation-patterned GaAs, with 1.3 mW average output power. The input pulses are generated via Raman self-frequency shift of a femtosecond Tm-doped-fiber laser system in a fluoride fiber. We numerically model the DFG process and show good agreement between simulations and experiments. ...
متن کاملBroadly tunable single-frequency cw mid-infrared source with milliwatt-level output based on difference-frequency generation in orientation-patterned GaAs.
A narrow-linewidth mid-IR source based on difference-frequency generation of an amplified 1.5 microm diode laser and a cw Tm-doped fiber laser in orientation-patterned (OP) GaAs has been developed and evaluated for spectroscopic applications. The source can be tuned to any frequency in the 7.6-8.2 microm range with an output power of 0.5 mW. The measured characteristics of the OP-GaAs sample de...
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ژورنال
عنوان ژورنال: Optics Letters
سال: 2017
ISSN: 0146-9592,1539-4794
DOI: 10.1364/ol.42.002193